Radiation hardness of semiconductors and deep level spectroscopy


Team leader - Prof. Dr. Sc. Juozas Vidmantis Vaitkus,

Phone: +370 5 223 4503 e-mail:


Current research activities

Radiation hard semiconductor devices for very high luminosity colliders (CERN rd50); radiation monitoring and imaging for Advanced European Infrastructures for Detectors at Accelerators (CERN project AIDA-2020). Investigation of carrier transport, generation, recombination and trapping phenomena by means of photo, - magnetic, - thermally stimulated spectroscopy. Modeling radiation clusters; Modeling semiconductor devices used in CERN RD50 investigations

Field of interest within the Center?

Investigation of fundamental and applied aspects of carrier transport, generation, recombination and trapping phenomena in materials and structures important for HEP. Analysis defects in different semiconductors, radiation defects, modeling of clusters and detectors.

Study of irradiated semiconductor materials and devices (computer modeling).

Available resources (Instrumentation, irradiation facilities etc.)

Photo-electrical, photo-magneto-electrical, deep-level-transient spectroscopy, IV testing, CV analysis equipment and apparatus Keithley 6430, Keithley 6517B, Keithley 6487, temperature range 10 K- 350 K. Liquid hellium cryogenic system ARS Cryo. Janis VPF-475 cryostat with CryoCon-32 with SI9700. Digital monochromator Bentham TMc300 with Bentham 605, Wayne Kerr 6440B impedance analyser.

Two workstation computers used for TCAD simulations and density functional modeling. Hall/magnetoresistivity measurement setup with 20ns impulse YAG:Nd laser, oscilloscope readout capability in 100 MHz range. Insulated electrical source/measurement up to 210V with 0.1 mV precision, 200 TOhm resistivity, from 1 pA to 100 mA current range.


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