Dr. Alvydas Lisauskas

Dr. Alvydas Lisauskas

Phone: +370 522 34 587

E-mail: 

Institute of Applied Electrodynamics and Telecommunications (IAET)

Electrical engineering, physics

Professor

Terahertz electronics, terahertz monolithic integrated circuits, field-effect-transistors, terahertz imaging, graphene

Scopus ID: 6602698877

ORCiD: 0000-0002-1610-4221

Web of Science ResearcherID: L-9754-2019

[1] K. Ikamas et al., “All-Electronic Emitter-Detector Pairs for 250 GHz in Silicon,” Sensors, vol. 21, no. 17, p. 5795, Aug. 2021, doi: 10.3390/s21175795.

[2] G. Valušis, A. Lisauskas, H. Yuan, W. Knap, and H. G. Roskos, “Roadmap of Terahertz Imaging 2021,” Sensors, vol. 21, no. 12, p. 4092, Jun. 2021, doi: 10.3390/s21124092.

[3] E. Javadi, D. B. But, K. Ikamas, J. Zdanevičius, W. Knap, and A. Lisauskas, “Sensitivity of Field-Effect Transistor-Based Terahertz Detectors,” Sensors, vol. 21, no. 9, p. 2909, Apr. 2021, doi: 10.3390/s21092909.

[4] M. Ferreras, D. Cibiraite-Lukenskiene, A. Lisauskas, J. Grajal, and V. Krozer, “Broadband Sensing Around 1 THz Via a Novel Biquad-Antenna-Coupled Low-NEP Detector in CMOS,” IEEE Trans. THz Sci. Technol., vol. 11, no. 1, pp. 16–27, Jan. 2021, doi: 10.1109/TTHZ.2020.3031483.

[5] P. Martín-Mateos et al., “Hyperspectral terahertz imaging with electro-optic dual combs and a FET-based detector,” Scientific Reports, vol. 10, no. 1, Dec. 2020, doi: 10.1038/s41598-020-71258-6.

[6] D. Čibiraitė-Lukenskienė, K. Ikamas, T. Lisauskas, V. Krozer, H. G. Roskos, and A. Lisauskas, “Passive Detection and Imaging of Human Body Radiation Using an Uncooled Field-Effect Transistor-Based THz Detector,” Sensors, vol. 20, no. 15, p. 4087, Jul. 2020, doi: 10.3390/s20154087.

[7] H. Yuan, D. Voß, A. Lisauskas, D. Mundy, and H. G. Roskos, “3D Fourier imaging based on 2D heterodyne detection at THz frequencies,” APL Photonics, vol. 4, no. 10, p. 106108, Oct. 2019, doi: 10.1063/1.5116553.

[8] M. Bauer et al., “A High-Sensitivity AlGaN/GaN HEMT Terahertz Detector With Integrated Broadband Bow-Tie Antenna,” IEEE Transactions on Terahertz Science and Technology, vol. 9, no. 4, pp. 430–444, Jul. 2019, doi: 10.1109/TTHZ.2019.2917782.

[9] J. Zdanevicius et al., “Field-Effect Transistor Based Detectors for Power Monitoring of THz Quantum Cascade Lasers,” IEEE Transactions on Terahertz Science and Technology, vol. 8, no. 6, pp. 613–621, Nov. 2018, doi: 10.1109/TTHZ.2018.2871360.

[10] K. Ikamas, D. Cibiraite, A. Lisauskas, M. Bauer, V. Krozer, and H. G. Roskos, “Broadband Terahertz Power Detectors based on 90-nm Silicon CMOS Transistors with Flat Responsivity up to 2.2 THz,” IEEE Electron Device Letters, vol. 39, no. 9, pp. 1413–1416, 2018, doi: 10.1109/LED.2018.2859300.

“Devices with electrically tunable metasurfaces for THz frequency band” Research Council of Lithuania, contract number S-MIP-22

“Directive transistor-based THz detectors (THzFET)” ESA Contract number: 4000122246/17NL/SC ”Terahertz radiation sources based on nonlinearities of nanometric semiconductor devices” Research Council of Lithuania, contract No. S-LAT-17-3

Principal investigator (Leader of VU team): “Compact integrated THz components and spectroscopic THz imaging systems” Research Council of Lithuania, contract No.LAT-04/2016

Bilateral Lithuanian-French cooperation project “Fast planar detectors for THz radiation” No. TAP-LZ-06/2015.

Partner in France: Jultiette Mangeney, Ecole Normale Superieure de Paris European Social Fund Grant VP1-3.1-ŠMM-07-K-03-040 “Rectification by plasma waves in 2D electron gas and its application for terahertz detection”

ICNF 2-5 June 2015 , Xi’an, China

(Invited) Terahertz rectification by plasmons and hot carriers in gated 2D electron gases TeraNano VII 2-8 October 2016 , Porquerolles, France

(Invited) Short-pulse terahertz radiation detection with field-effect transistors IRMMW-THz 43, 9-14 September 2018, Nagoya, Japan

(Keynote) THz Detection With Field-effect Transistors: The Role Of Plasma Waves And Of Thermoelectric Contributions ESSDERC 49, 23-26 September 2019, Cracow, Poland

(Tutorial) Terahertz integrated circuits for free-space applications
SPIE Optics and Photonics, 11-16 August 2019, San Diego USA

(Invited) Electrical nonlinearities in field effect transistors and their applications for terahertz autocorrelation measurements French-Polish THz Science and Technology Meeting, 15 October 2019 Warsaw, Poland, (Invited) Active THz devices APROPOS 17, 30 September - 1 October 2020, Vilnius, Lithuania

(Invited ) THz detectors and sources fabricated with CMOS technologies IRMMW-THz 2021, 29 August – 03 September 2020, Chengdu, China

(Keynote) Electrically Tunable Detector For Millimeter Frequency Band SPIE Optics and Photonics, 21-25 August 2022, San Diego USA

(Invited) Silicon-based all-electronic quasi-optical pairs for THz frequency range

2014-2018 Kestutis Ikamas - topic: “Semiconductor devices for wireless communications at terahertz frequencies”

Microwave electronics

Completed master theses: Dovilė Čibiraitė, Arvydas Vencius, Lukas Dundulis, Marek Burakevič,

Completed bachelor theses: Marek Burakevič, Matas Razgūnas, Tomas Česnavičius, Tomas Dabulskis, Ieva Morkūnaitė.

Participation in the national/international governing bodies, commissions, committees, boards etc.

From 2020 to 2023 appointed as a member of the Sensors and Electronics Technology panel at the NATO Science and Technology Organization

Nominee for Global Lithuania Awards 2020 in the category “For Solid Voice in Global Science Community”.

The 2021 THz Science and Tech. Best Paper Award of the IEEE Microwave Theory and Techniques Society (MTT-S).

Kazimieras Baršauskas Prize in electronics and electrical engineering in 2022 awarded by the Lithuanian Academy of Sciences for scientific work “Terahertz electronics: application of plasma waves to the operation of semiconductor devices above the cutoff frequencies”.