On October 12 at 10:00 in room B128, Saulėtekio ave. 3.
Speaker: Prof. Chia-Yen Huang (Department of Photonics, National Yang Ming Chiao Tung University, Taiwan)
Abstract:
Aluminum nitride and gallium nitride are semiconductor materials with unique properties such as their wide band gaps, high thermal conductivity, and many others. Conventionally, GaN and AlN epilayers are used as the growth templates for optoelectronic and electronic devices. In the past few years, these templates have also proven to be an ideal playground for optical metasurfaces, for example, metalenses and meta-collimators. In this talk, Prof. Huang will introduce strategies and the latest achievements in III-nitride meta-lenses and meta-collimators whose characteristics cannot be achieved by any single conventional optical element. By incorporating multiple phase profiles into a single metasurface, light passing through the metalens can generate multiple foci with different polarization states, and the spot sizes can exceed the diffraction limit. The meta-collimator can be responsive to the point light source within an annular region rather than to discrete spots. These versatile and super-functional III-nitride metasurfaces can be used to enhance the capacity and bandwidth of many critical applications, such as direct lithography, super-resolution imaging, and data communications.
