Dr. Tadas Malinauskas

Dr. Tadas Malinauskas

Phone: +370 5 223 4687

E-mail: 

Institute of Photonics and Nanotechnology (IPN)

Physics, Semiconductor Physics, Epitaxy

Professor, Senior Research Fellow

III-nitrides; MOCVD; Remote Epitaxy; Optical and Structural Characterization of Semiconductors; Ultrafast Carrier Dynamics; Numerical Modeling

• https://scholar.google.com/citations?user=ry9TDP0AAAAJ&hl=lt
• https://orcid.org/0000-0001-5722-664X
• https://www.researchgate.net/profile/Tadas-Malinauskas

• K Badokas, A. Kadys, D. Augulis, J. Mickevičius, I. Ignatjev, M. Skapas, B. Šebeka, G. Juška and T. Malinauskas “MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates” Nanomaterials 12,785 (2022). (https://doi.org/10.3390/nano12050785).
• K. Badokas, A. Kadys, J. Mickevicius, I. Ignatjev, M. Skapas, S. Stanionytė, E. Radiunas, G. Juška, T. Malinauskas “Remote epitaxy of GaN via graphene on GaN/sapphire templates” J. Phys. D: Appl. Phys. 54 205103 (2021) (https://doi.org/10.1088/1361-6463/abe500).
• J.Juodkazytė, B. Šebeka, I. Savickaja, A. Kadys, E. Jelmakas, T, Grinys, S. Juodkazis, K. Juodkazis, T. Malinauskas „InxGa1-xN performance as a band-gap-tunable photo-electrode in acidic and basic solutions“ Solar energy materials & Solar cells 130, 36-41 (2014).
• B. Monemar, P.P. Paskov, J. P. Bergman, G. Pozina, A.A. Toropov, T.V. Shubina, T. Malinauskas, “Transient photoluminescence of shallow donor bound excitons in GaN”, Physical Review B 82, 235202 (2010).
• T. Malinauskas, K. Jarasiunas, S. Miasojedovas, S. Jursenas, B. Beaumont, and P. Gibart, "Optical monitoring of nonequilibrium carrier lifetime in freestanding GaN by time-resolved four-wave mixing and photoluminescence techniques", App. Phys. Lett. 88, 202109 (2006).
• R. Aleksiejunas, M. Sudzius, T. Malinauskas, J. Vaitkus, K. Jarasiunas, and S. Sakai, "Determination of free carrier bipolar diffusion coefficient and surface recombination velocity of undoped GaN epilayers", Applied Physics Letters 83, 1157 (2003).

• [2024-2027] Research Council of Lithuania funded “Development of Low-Gain Avalanche Detector Technology Based on GaN Membranes”.
• [2018-2022] Research Council of Lithuania funded „MOCVD growth of III-nitride semiconductors by van der Waals epitaxy on graphene“ • [2015-2017] Research Council of Lithuania funded project „ Development of nonpolar GaN on silicon growth technology with rare-earth oxide interlayers“.
• [2012-2014] Nordic Energy Research funded project – High Efficiency Integrated Solar Energy Converter (HEISEC), co-leader at VU.
• [2011-2012] Research Council of Lithuania funded project „Femtosecond digital holography for nonlinear processes investigation in group III nitrides compound“, co-leader at Institute of Applied Research.
• [2010-2011] Research Council of Lithuania funded National program project „Development of inorganic photovoltaic materials technology“.

• “Remote epitaxy of GaN via Graphene on GaN/Sapphire Templates”, Workshop on Advanced Epitaxy for Freestanding Membranes and 2D Materials, July 06-08, 2022, MIT, Cambridge USA.
• “Remote Epitaxy of GaN via Graphene”, Advanced Properties and Processes in Optoelectronic Materials and Systems“ (APROPOS 17), Rugsėjo 30 - Spalio 1, 2020, Vilnius, Lietuva
• PV Technology Perspectives in Lithuania” T. Malinauskas, Next Generation Solar Energy From Fundamentals to Applications, Gruodžio 12-14, 2011, Erlangen, Vokietija.

Doctoral Students:

• K. Badokas “Van der Waals epitaxy of III- nitrides via graphene”;
• D. Augulis “Development of innovative MOCVD epitaxy of III-nitrides”.

• Electricity and Magnetism
• Introduction to Quantum Mechanics
• Introduction to X-ray diffraction

• The award from Vilnius university Rector for young scientist (2010).
• The scholarship for young scientist from Lithuanian Academy of Sciences (2010).
• The award from Vilnius university Rector for young scientist (2006).
• The award from Lithuanian Academy of Sciences for student work „Investigation of carrier recombination ant transport in differently grown GaN layers“ (2005).