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Dr. Marek Kolenda Phone: +370 522 34 685 LinkedIn: https://www.linkedin.com/in/marek-kolenda-4b5a66117/
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| Institute / Center |
Institute of Photonics and Nanotechnology (IPN) |
| Research Area |
MOVPE of III-N semiconductor structures |
| Present position |
Research Fellow / Assistant |
| Scientific Interests, Keywords |
‣ Epitaxy/Growth of GaN, InN, AlN, BN by MOVPE ‣ Epilayer characterization ‣ III-polar and N-polar Nitride LPS structures (lateral polarity structures) ‣ III-polar and N-polar Nitride planar structures ‣ III-Nitride waveguides for second harmonic generation |
| Links to External Profile |
ResearchGate: https://www.researchgate.net/profile/Marek-Kolenda |
| Most important publications |
Marek Kolenda, Arūnas Kadys, Tadas Malinauskas, Edvinas Radiunas, Riina Ritasalo, Roland Tomašiūnas. "The importance of nucleation layer for the GaN N-face purity on the annealed Al2O3 layers deposited by atomic layer deposition". Materials Science and Engineering: B. Vol. 284, 115850, 2022. M. Kolenda, D, Kezys, I. Reklaitis, E. Radiunas, R. Ritasalo, A. Kadys, T. Grinys, T. Malinauskas, S. Stanionytė, M. Skapas, R. Petruškevičius, R. Tomašiūnas, „Development of polarity inversion in a GaN waveguide structure for modal phase matching“, Journal of Materials Science, Vol. 55, p. 12008-12021, 2020. V. Svrcek, M. Kolenda, A. Kadys, I. Reklaitis, D. Dobrovolskas, T. Malinauskas, M. Lozach, D. Mariotti, M. Strassburg, R. Tomašiūnas, „Significant carrier extraction enhancement at the interface of an InN/p-GaN heterojunction under reverse bias voltage“, Nanomaterials, Vol. 8, p 1039 (1-12), 2018. Other publications: https://scholar.google.lt/citations?user=Tvet-SQAAAAJ&hl=pl&oi=ao |
| Teaching Courses |
Electricity and Magnetism (practical part) |