Dr. Justinas Glemža

Dr. Justinas Glemža

Phone: +370 522 34 581

E-mail: 

Institute of Applied Electrodynamics and Telecommunications (IAET)

Physics

Researcher

Low-frequency noise in electronic and optoelectronic devices and novel semiconductor materials; noise origin in semiconductors; reliability assessment of laser diodes and light-emitting diodes

https://orcid.org/0000-0003-4277-3688

https://www.researchgate.net/profile/Justinas-Glemza

1. J. Glemža, V. Palenskis, R. Gudaitis, Š. Jankauskas, A. Guobienė, A. Vasiliauskas, Š. Meškinis, S. Pralgauskaitė, J. Matukas, Low-frequency noise of directly synthesized graphene/Si(100) junction, Diam. Relat. Mater. 127, 109207 (2022); doi: 10.1016/j.diamond.2022.109207.
2. V. Palenskis, J. Matukas, J. Glemža, S. Pralgauskaitė, Review of low-frequency noise properties of high-power white LEDs during long-term aging, Materials 15, 13 (2022); doi: 10.3390/ma15010013.
3. J. Glemža, V. Palenskis, A. Geižutis, B. Čechavičius, R. Butkutė, S. Pralgauskaitė, J. Matukas, Low-frequency noise investigation of 1.09 µm GaAsBi laser diodes, Materials 12, 673 (2019); doi: 10.3390/ma12040673.
4. J. Glemža, V. Palenskis, S. Pralgauskaitė, J. Vyšniauskas, J. Matukas, Properties of the surface generation-recombination noise in 1.94 μm GaSb-based laser diodes, Infrared Phys. Technol. 91, 101–106 (2018); doi: 10.1016/j.infrared.2018.04.002.
5. J. Glemža, S. Pralgauskaitė, V. Palenskis, J. Matukas, Low-frequency noise investigation of 2–3 µm GaSb-based laser diodes, Solid State Electron. 133, 70–77 (2017); doi: 10.1016/j.sse.2017.05.002.
6. S. Pralgauskaitė, V. Palenskis, J. Matukas, J. Glemža, G. Muliuk, B. Šaulys, A. Trinkūnas, Reliability investigation of light-emitting diodes via low frequency noise characteristics. Microelectron. Reliab. 55, 52–61 (2015); doi: 10.1016/j.microrel.2014.09.027.

3 successfully defended bachelor theses since 2019