Dr. Žydrūnas Podlipskas

Dr. Žydrūnas Podlipskas

Phone: +370 5 223 4467

E-mail: zydrunas.podlipskas@ff.vu.lt

Institute of Photonics and Nanotechnology (IPN)

Semiconductor Physics

Senior Researcher

Cathodoluminescence-SEM Microscopy; Time-resolved Characterisation; Nitrides; Semiconductor Defects; Computational Approaches for Image Processing

• ORCID: 0000-0003-4745-1127
• G Scholar: https://scholar.google.com/citations?user=gORuY3wAAAAJ&hl=en

• Talochka, Y., et al. Evaluation of ambipolar diffusion coefficient in AlxGa1− xN semiconductor. Journal of Alloys and Compounds 969, 172475 (2023). https://doi.org/10.1016/j.jallcom.2023.172475
• Nargelas, S., et al. Influence of heavy magnesium codoping on emission decay in Ce-doped multicomponent garnet scintillators. Journal of Materials Chemistry C 11.35, 12007-12015 (2023). https://doi.org/10.1039/D3TC02247A
• Nomeika, K., et al. Impact of carrier diffusion on the internal quantum efficiency of InGaN quantum well structures. Journal of Materials Chemistry C 10.5, 1735-1745 (2022). https://doi.org/10.1039/D1TC04760D
• Podlipskas, Ž., et al. The detrimental effect of AlGaN barrier quality on carrier dynamics in AlGaN/GaN interface. Scientific reports 9, 1-8 (2019). https://doi.org/10.1038/s41598-019-53732-y
• Podlipskas, Ž., et al. Extreme radiation resistance in InN. Journal of Alloys and Compounds 789, 48–55 (2019). https://doi.org/10.1016/j.jallcom.2019.03.108
• Aleksiejūnas, R., et al. Direct Auger recombination and density-dependent hole diffusion in InN. Scientific Reports 8, 4621 (2018). https://doi.org/10.1038/s41598-018-22832-6
• Podlipskas, Ž., et al. Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers. Journal of Physics D: Applied Physics 49, 145110 (2016). https://doi.org/10.1088/0022-3727/49/14/145110