Spalio 29 d. 10 val. A101 auditorijoje (Nacionaliniame fizinių ir technologijos mokslų centre, Saulėtekio al. 3) seminarą „Nitride-based transistors – from lateral to vertical structure” anglų kalba ves svečias iš Taivano. Kviečiame pasiklausyti profesoriaus Jian-Jang Huang (Distinguished Professor and Associate Dean of the College of Electrical Engineering and Computer Science, Graduate Institute of Photonics and Optoelectronics (GIPO), Department of Electrical Engineering National Taiwan University).
Santrauka anglų kalba:
Nitride-based high electron mobility transistors (HEMTs) have now reached the stage of commercialization in power electronics. They can operate at high voltages, high currents, high temperatures, and high switching speeds. Their circuit conversion efficiency in power modules can exceed that of silicon (Si) devices, and the corresponding passive components can be up to ten times smaller. In today’s world, where energy consumption is a critical global issue, the advantages of adopting GaN for power applications are clear.
This talk will present our two decades of development in nitride-based transistors. We demonstrated the first functional GaN heterojunction bipolar transistors (HBTs) in 2000 at the University of Illinois, Urbana-Champaign. At National Taiwan University, we developed state-of-the-art enhancement-mode (E-mode) GaN HEMTs and successfully transferred the technology to industry for commercial use.
The epitaxial structure of HEMTs will be introduced by exploring their unique material growth methods and the mechanism of two-dimensional electron gas (2DEG) carrier accumulation. I will explain the principles of HEMT and Schottky barrier diode (SBD) device operations, along with our technological innovations to improve electrical performance. Challenges such as current collapse and defect-related issues, as well as our solutions to address them, will also be discussed.
Finally, with the maturation of lateral GaN HEMT structures, the field is now moving toward vertical transistors on GaN substrates, which offer higher breakdown voltages and greater current densities. I will share our recent results in this area.
Daugiau informacijos apie profesorių (anglų kalba):
Prof. Huang received his Ph.D. degree in Electrical Engineering from the University of Illinois at Urbana-Champaign, USA, in 2002. His research interest focus on the characterization and development of electronic and optoelectronic devices for power electronics and micro-display applications. He is a fellow of Optica and SPIE and serves as a board director of Wiwynn, an IT provider specializing in AI cloud infrastructure.